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专利名称：Low-resistance interconnects and methods
of making same
发明人：Jaydeb Goswami,Allen McTeer申请号：US12981330申请日：20101229公开号：US09202786B2公开日：20151201
专利附图：
摘要：Devices and methods for providing low-resistance interconnects in asemiconductor device are provided. Specifically, one or more embodiments of thepresent invention relate to disposing a conductive material in a trench without disposing
a resistive barrier material between the conductive material and the sidewalls of thetrench so that the conductive material takes up the full width of the trench. For example,the trench may be disposed over one or more contacts made of a barrier material such astitanium nitride that also acts as a seed, and the conductive material may be grown ontop of the titanium nitride to fill the trench.
申请人：Jaydeb Goswami,Allen McTeer
地址：Boise ID US,Eagle ID US
国籍：US,US
代理机构：Fletcher Yoder, P.C.
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