Lateral conductivity modulated MOSFET

专利名称：Lateral conductivity modulated MOSFET发明人：Akio Nakagawa,Hiromichi Ohashi,Yoshihiro

Yamaguchi,Kiminori Watanabe,ThuneoThukakoshi

申请号：US07/205365申请日：19880610公开号：US04928155A公开日：19900522

摘要：A conductivity modulated MOSFET, having a semiconductor substrate of a firstconductivity type, a semiconductor layer of a second conductivity type formed on thesemiconductor substrate and having a high resistance, a base layer of the firstconductivity type formed in the semiconductor layer, a source layer of the secondconductivity type formed in the base layer, a gate electrode formed on a gate insulatingfilm which is formed on a channel region, the channel region being formed in a surface ofthe base layer between the semiconductor layer and the source layer, a source electrodeohmic-contacting the source layer and the base layer, and a drain electrode formed onthe surface of the semiconductor substrate opposite to the semiconductor layer,characterized in that the conductivity modulated MOSFET has a saturation currentsmaller than a latch-up current when a predetermined gate voltage is applied to the gateelectrode.

申请人：KABUSHIKI KAISHA TOSHIBA

代理机构：Oblon, Spivak, McClelland, Maier & Neustadt

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