Method of manufacturing thin film transistor

专利名称：Method of manufacturing thin film transistor发明人：Hisashi Ohtani申请号：US09449140申请日：19991124公开号：US06277679B1公开日：20010821

专利附图：

摘要：The object of the present invention is to form a low-concentration impurityregion with good accuracy in a top gate type TFT. Phosphorus is added to a

semiconductor layer by using a pattern made of a conductive film as a mask to form anN-type impurity region in a self-alignment manner. A positive photoresist is applied to a

substrate so as to cover the pattern and then is exposed to light applied to the back ofthe substrate and then is developed, whereby a photoresist 110 is formed. The pattern isetched by using the photoresist pattern as an etching mask to form a gate electrode. Achannel forming region, a source region, a drain region, and low-concentration impurityregions, are formed in the semiconductor layer in a self-alignment manner by using thegate electrode as a doping mask.

申请人：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

代理机构：Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.

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