CMOS device and method of manufacturing the same

专利名称：CMOS device and method of manufacturing

the same

发明人：Shigeki Onodera,Ichiro Ohashi申请号：US09996795申请日：20011130公开号：US079338B2公开日：20021112

专利附图：

摘要：A semiconductor substrate having a first conductivity type is first prepared.Then, a well region is formed in the substrate so as to have a second conductivity typeopposite to the first conductivity type. Next, a first ion having the first conductivity type is

implanted into the well region to form a region to be a first drain region having a firstimpurity density and into the substrate to form a region to be a first channel stopperregion. Next, a second ion having the second conductivity type is implanted into the wellto form a region to be a second channel stopper region and into the substrate to form aregion to be a the second drain region having a second impurity density. Then, therespective ion implanted regions are thermally diffused to form the first drain region andthe second channel stopper region in the well region and to form the second drainregion and the first channel stopper region in the substrate. Next, a third drain region isformed in the first drain region so as to have the first conductivity type and a thirdimpurity density higher than the first impurity density. And a fourth drain region isformed in the second drain region so as to have the second conductivity type and afourth impurity density higher than the second impurity density.

申请人：MITSUMI ELECTRIC CO., LTD.

代理机构：Whitham, Curtis & Christofferson, P.C.

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