Memory Device Constructions, Memory Cell Forming M

专利名称：Memory Device Constructions, Memory Cell

Forming Methods, and SemiconductorConstruction Forming Methods

发明人：Jun Liu申请号：US13418082申请日：20120312

公开号：US20120168708A1公开日：20120705

专利附图：

摘要：Memory device constructions include a first column line extending parallel to asecond column line, the first column line being above the second column line; a row line

above the second column line and extending perpendicular to the first column line andthe second column line; memory material disposed to be selectively and reversiblyconfigured in one of two or more different resistive states; a first diode configured toconduct a first current between the first column line and the row line via the memorymaterial; and a second diode configured to conduct a second current between thesecond column line and the row line via the memory material. In some embodiments, thefirst diode is a Schottky diode having a semiconductor anode and a metal cathode andthe second diode is a Schottky diode having a metal anode and a semiconductor cathode.

申请人：Jun Liu

地址：Boise ID US

国籍：US

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